TSM089N08LCR RLG
TSM089N08LCR RLG
Part Number TSM089N08LCR RLG
Description MOSFET N-CH 80V 67A 8PDFN
Package / Case 8-PowerTDFN
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Lead Time To be Confirmed
Detailed Description N-Channel 80V 67A (Tc) 83W (Tc) Surface Mount 8-PDFN (5x6)
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TSM089N08LCR RLG - Product Attributes
Categories
Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet TSM089N08LCR
Standard Package 1
Manufacturer Taiwan Semiconductor Corporation
Series -
Packaging Cut Tape (CT)
Part Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 80V
Current - Continuous Drain (Id) @ 25°C 67A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Rds On (Max) @ Id, Vgs 8.9mOhm @ 12A, 10V
Vgs(th) (Max) @ Id 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 90nC @ 10V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 6119pF @ 40V
FET Feature -
Power Dissipation (Max) 83W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package 8-PDFN (5x6)
Package / Case 8-PowerTDFN
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